sot-23 plastic-encapsulate mosfets CJ2333 p-channel mosfet description the CJ2333 uses advanc ed trench technology and design to provide excellent r ds(on) with low gate charge.th is device is suitable for use in pwm,load switchi ng and general purpose applications. feature ? trenchfet power mosfet application ? dc/dc converter ? load switch for portable devices ? battery switch marking: s33 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -12 v gate-source voltage v gs 8 v continuous drain current i d -6 a a pulsed drain current (t=300s) i dm -20 a 0.35 b w power dissipation p d 1.1 a w 357 b /w thermal resistance from junction to ambient r ja 113 a /w junction temperature t j 150 storage temperature t stg -55~ +150 a. device mounted on fr-4 substrate board, with minimum recommended pad layout, single side. b. device mounted on no heat sink. sot-23 1. gate 2. source 3 . drain 1 of 3 sales@zpsemi.com www.zpsemi.com CJ2333 a-2,dec,2012
electrical characteristics(t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -12 v zero gate voltage drain current i dss v ds =-12v,v gs = 0v -1 a gate-body leakage current i gss v gs =8v, v ds = 0v 0.1 a gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =-250a -0.4 -1 v v gs =-4.5v, i d =-5a 28 v gs =-3.7v, i d =-4.6a 32 v gs =-2.5v, i d =-4.3a 40 v gs =-1.8v, i d =-1a 63 drain-source on-resistance (note 1) r ds(on) v gs =-1.5v, i d =-0.5a 150 m ? forward tranconductance (note 1) g fs v ds =-5v, i d =-5a 18 s dynamic characteristics (note 2) input capacitance c iss 1275 pf output capacitance c oss 255 pf reverse transfer capacitance c rss v ds =-6v,v gs =0v,f =1mhz 236 pf gate resistance r g f =1mhz 1.9 19 ? total gate charge q g 14 21 nc gate-source charge q gs 2.3 nc gate-drain charge q gd v ds =-6v,v gs =-4.5v,i d =-5a 3.6 nc turn-on delay time t d(on) 26 40 ns turn-on rise time t r 24 40 ns turn-off delay time t d(off) 45 70 ns turn-off fall time t f v dd =-6v,v gen =-4.5v,i d =-4a r l =6 ? ,r gen =1 ? 20 35 ns source-drain diode characteristics diode forward current i s t c =25 -1.4 a diode pulsed forward current i sm -20 a diode forward voltage (note 1) v ds v gs =0v, i s =-4a -1.2 v diode reverse recovery time (note 2) t rr 24 48 ns diode reverse recovery charge (note 2) q rr i f =-4a , di/dt=100a/ s 8 16 nc notes : 1. pulse test; pulse width 300 s, duty cycle 2%. 2. guaranteed by design, not subject to production testing. 2 of 3 sales@zpsemi.com www.zpsemi.com CJ2333 a-2,dec,2012
-0.0 -0.4 -0.8 -1.2 -1.6 -1e-3 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -5 -0 -4 -8 -12 -16 -20 -0 -1 -2 -3 -4 -5 -6 -7 0 40 80 120 160 200 -0 -1 -2 -3 -4 -5 0 40 80 120 160 200 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.0 -0.3 -0.6 -0.9 -1.2 -1.5 25 50 75 100 125 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 v sd i s ?? t a =25 pulsed source current i s (a) source to drain voltage v sd (v) v gs = -5v -4.5v -3.5v 2.5v v gs =-2v output characteristics v gs =-1.5v drain current i d (a) drain to source voltage v ds (v) vgs=-4.5v vgs=-3.7v vgs=-2.5v t a =25 pulsed on-resistance r ds(on) (m ) drain current i d (a) i d ?? r ds(on) vgs=-1.5v vgs=-1.8v i d =-4.3a i d =-5a t a =25 pulsed on-resistance r ds(on) (m ) gate to source voltage v gs (v) v gs ?? r ds(on) drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =-250ua threshold voltage threshold voltage v th (v) ambient temperature t a ( ) 3 of 3 sales@zpsemi.com www.zpsemi.com CJ2333 a-2,dec,2012
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